Resistance, thermal stability, high mechanical strength, low permeability, and good oxidation resistance
The raw material is fit for producing various semiconductor molds and large anode of radio tube
Materials index:
Content: 99.99%
Density: 1.87g/cm³
Specific resistance: 9 Ohms-m
Compressive strength: 65mPa
Shore hardness: 55
Porosity: 15%
Main products of this series:
Graphite mold for semiconductor, bipolar plate of fuel cell, graphite base, graphite gasket, EBE graphite ling, graphite boat for sealing glass and metal, graphite parts for ion implantation, graphite thermal field for crystal growing furnace
Usage: For machined graphite products
For non-ferrous metallurgy and processing
For creating mold of diamond tools
For electron and semiconductor industry
For application of processing by industrial furnace under high temperature
For mechanical industry